TOSHIBA · FETs & Power MOSFETs · MPN TW083N65C,S1F
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| Gate Charge(Qg) | 28nC@18V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 30A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 111W |
| RDS(on) | 113mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 873pF |
650V 30A 5V 111W 113mΩ@18V 1 N-channel TO-247 Single FETs, MOSFETs RoHS