TOSHIBA · FETs & Power MOSFETs · MPN TW070J120B,S1Q
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| Gate Charge(Qg) | 67nC@20V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.8V |
| Pd - Power Dissipation | 272W |
| RDS(on) | 90mΩ@20V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.68nF |
1.2kV 36A 5.8V 272W 90mΩ@20V 1 N-channel TO-3P(N) Single FETs, MOSFETs RoHS