TOSHIBA · FETs & Power MOSFETs · MPN TW060N120C,S1F
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| Gate Charge(Qg) | 46nC@18V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 36A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 170W |
| RDS(on) | 78mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.53nF |
1.2kV 36A 5V 170W 78mΩ@18V 1 N-channel TO-247 Single FETs, MOSFETs RoHS