TOSHIBA · FETs & Power MOSFETs · MPN TW048N65C,S1F
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 41nC@18V |
| Output Capacitance(Coss) | 156pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF |
| RDS(on) | 65mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.362nF |
| Type | N-Channel |
650V 40A 5V 132W 65mΩ@18V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS