TOSHIBA · FETs & Power MOSFETs · MPN TW045N120C,S1F
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| Gate Charge(Qg) | 57nC@18V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 182W |
| RDS(on) | 59mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.969nF |
1.2kV 40A 5V 182W 59mΩ@18V 1 N-channel TO-247 Single FETs, MOSFETs RoHS