TOSHIBA · FETs & Power MOSFETs · MPN TW015Z120C,S1F
No reviews yet — be the first to review TOSHIBA TW015Z120C,S1F.
| Gate Charge(Qg) | 158nC@18V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 100A |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 431W |
| RDS(on) | 21mΩ@18V |
| Type | N-Channel |
1.2kV 100A 5V 431W 21mΩ@18V N-Channel Single FETs, MOSFETs RoHS