TOSHIBA · FETs & Power MOSFETs · MPN TPWR8503NL,L1Q
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| Gate Charge(Qg) | 74nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 2.7nF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 1.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.9nF |
| Type | N-Channel |
30V 150A 2.3V 142W 1.3mΩ@4.5V 1 N-channel N-Channel DSOP-8-EP-5.0mm Single FETs, MOSFETs RoHS