TOSHIBA TPW4R50ANH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPW4R50ANH,L1Q

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)92A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Type-

Technical details

100V 92A 4V 4.5mΩ@10V 1 N-channel DSOP-8-EP-5.0mm Single FETs, MOSFETs RoHS

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