TOSHIBA · FETs & Power MOSFETs · MPN TPW2900ENH,L1Q
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 33A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
N-Channel 200V 33A 142W Surface Mount DSOPADVANCE-8