TOSHIBA · FETs & Power MOSFETs · MPN TPW1R306PL,L1Q
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| Gate Charge(Qg) | 91nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 1.16nF |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 170W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 0.95mΩ@10V |
| Input Capacitance(Ciss) | 6.25nF |
| Vgs | ±20V |
60V 100A 2.5V 170W 0.95mΩ@10V DSOPADVANCE-8 Single FETs, MOSFETs RoHS