TOSHIBA · FETs & Power MOSFETs · MPN TPW1R104PB,L1XHQ
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 2.94nF |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 132W |
| Reverse Transfer Capacitance (Crss@Vds) | 320pF |
| RDS(on) | 0.95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.56nF |
| Type | N-Channel |
40V 120A 3V 132W 0.95mΩ@10V 1 N-channel N-Channel DSOPADVANCE-8 Single FETs, MOSFETs RoHS