TOSHIBA · FETs & Power MOSFETs · MPN TPW1R005PL,L1Q
No reviews yet — be the first to review TOSHIBA TPW1R005PL,L1Q.
| Output Capacitance(Coss) | 1.86nF |
|---|---|
| Pd - Power Dissipation | 170W |
| Gate Charge(Qg) | 122nC |
| Configuration | - |
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.7nF |
170W 45V 1.4V 0.75mΩ@10V 1 N-channel N-Channel DSOPADVANCE-8 Single FETs, MOSFETs RoHS