TOSHIBA TPN8R903NL,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPN8R903NL,LQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)-
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation700mW;22W
RDS(on)8.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)820pF

Technical details

30V 20A 2.3V 8.9mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS

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