TOSHIBA · FETs & Power MOSFETs · MPN TPN8R408QM,L1Q(M
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| Gate Charge(Qg) | 28nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 460pF |
| Current - Continuous Drain(Id) | 32A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 6.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
| Type | N-Channel |
80V 32A 3.5V 100W 6.5mΩ@10V 1 N-channel N-Channel TSON-8 Single FETs, MOSFETs RoHS