TOSHIBA TPN7R006PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN7R006PL,L1Q

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)54A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation630mW;75W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.875nF

Technical details

60V 54A 2.5V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS

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