TOSHIBA · FETs & Power MOSFETs · MPN TPN6R303NC,LQ
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 700mW;19W |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
30V 20A 2.3V 6.3mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS