TOSHIBA TPN5900CNH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN5900CNH,L1Q

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)7nC@10V
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation700mW;39W
RDS(on)59mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

N-Channel 150V 9A 700mW 39W Surface Mount TSON-8(3.1x3.1)

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