TOSHIBA · FETs & Power MOSFETs · MPN TPN4R806PL,L1Q
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 29nC@10V |
| Current - Continuous Drain(Id) | 72A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 630mW;104W |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.77nF |
60V 72A 2.5V 3.5mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS