TOSHIBA · FETs & Power MOSFETs · MPN TPN4R712MD,L1Q
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 65nC@5V |
| Current - Continuous Drain(Id) | 36A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 42W |
| RDS(on) | 4.7mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.3nF |
20V 36A 1.2V 42W 4.7mΩ@4.5V 1 P-Channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS