TOSHIBA · FETs & Power MOSFETs · MPN TPN4R303NL,L1Q
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 14.8nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 700mW;34W |
| RDS(on) | 4.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
30V 40A 2.3V 4.3mΩ@10V 1 N-channel TSON-8(3.3x3.3) Single FETs, MOSFETs RoHS