TOSHIBA TPN4R203NC,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN4R203NC,L1Q

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)23A
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation-
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.37nF

Technical details

30V 23A 2.3V 4.2mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS

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