TOSHIBA · FETs & Power MOSFETs · MPN TPN4R203NC,L1Q
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 23A |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | - |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.37nF |
30V 23A 2.3V 4.2mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS