TOSHIBA TPN3R704PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN3R704PL,L1Q

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.91nF
TypeN-Channel

Technical details

N-Channel 40V 2.6W Surface Mount TSON-8(3.1x3.1)

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