TOSHIBA · FETs & Power MOSFETs · MPN TPN3300ANH,LQ
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 9.4A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 700mW;27W |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 880pF |
100V 9.4A 4V 33mΩ@10V 1 N-channel TSON-8(3.3x3.3) Single FETs, MOSFETs RoHS