TOSHIBA TPN2R903PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN2R903PL,L1Q

No reviews yet — be the first to review TOSHIBA TPN2R903PL,L1Q.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)26nC@10V
Current - Continuous Drain(Id)70A
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation-
RDS(on)2.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

30V 70A 2.1V 2.9mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs