TOSHIBA · FETs & Power MOSFETs · MPN TPN2R805PL,L1Q
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| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 139A;80A |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 2.67W;104W |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.2nF |
45V 2.4V 2.8mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS