TOSHIBA TPN2R703NL,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPN2R703NL,L1Q(M

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)21nC@10V
Output Capacitance(Coss)890pF
Current - Continuous Drain(Id)90A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)3.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.6nF

Technical details

N-Channel 30V 90A 42W Surface Mount TSON-8

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