TOSHIBA TPN2R304PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPN2R304PL,L1Q

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Specifications

Gate Charge(Qg)41nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation630mW;104W
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.6nF

Technical details

N-Channel 40V 80A 630mW 104W Surface Mount TSON-8(3.1x3.1)

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