TOSHIBA · FETs & Power MOSFETs · MPN TPN22006NH,LQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 9A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 700mW;18W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
60V 9A 4V 22mΩ@10V 1 N-channel TSON-8(3.3x3.3) Single FETs, MOSFETs RoHS