TOSHIBA · FETs & Power MOSFETs · MPN TPN1R603PL,L1Q
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 2.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | - |
N-Channel 30V 80A 104W Surface Mount TSDSON-8(3.3x3.3)