TOSHIBA TPN19008QM,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPN19008QM,LQ

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)14.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.02nF
TypeN-Channel

Technical details

N-Channel 80V 38A Surface Mount TSON-8(3.1x3.1)

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