TOSHIBA · FETs & Power MOSFETs · MPN TPN1600ANH,L1Q
No reviews yet — be the first to review TOSHIBA TPN1600ANH,L1Q.
| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 17A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 700mW;42W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
N-Channel 100V 17A 700mW 42W Surface Mount TSON-8(3.1x3.1)