TOSHIBA · FETs & Power MOSFETs · MPN TPN14006NH,L1Q
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 13A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
60V 13A 4V 14mΩ@10V 1 N-channel TSON-8(3.3x3.3) Single FETs, MOSFETs RoHS