TOSHIBA · FETs & Power MOSFETs · MPN TPN1200APL,L1Q
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 630mW;104W |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.855nF |
N-Channel 100V 40A 630mW 104W Surface Mount TSON-8(3.1x3.1)