TOSHIBA · FETs & Power MOSFETs · MPN TPN11006PL,LQ
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 17nC@10V |
| Current - Continuous Drain(Id) | 26A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 610mW;61W |
| RDS(on) | 11.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.625nF |
60V 26A 2.5V 11.4mΩ@10V 1 N-channel TSON-8(3.1x3.1) Single FETs, MOSFETs RoHS