TOSHIBA TPN11006NL,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPN11006NL,LQ

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)37A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)11.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 60V 37A 30W Surface Mount TSDSON-8(3.3x3.3)

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