TOSHIBA TPN11003NL,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPN11003NL,LQ

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Specifications

Gate Charge(Qg)7.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)11A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel 30V 11A 19W Surface Mount PQFN-8(3.1x3.1)

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