TOSHIBA TPHR9003NL1,LQ

TOSHIBA · FETs & Power MOSFETs · MPN TPHR9003NL1,LQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)74nC@10V
Current - Continuous Drain(Id)150A
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation800mW;170W
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.9nF

Technical details

30V 150A 2.3V 0.9mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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