TOSHIBA TPHR8504PL1,LQ(M

TOSHIBA · FETs & Power MOSFETs · MPN TPHR8504PL1,LQ(M

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Specifications

Output Capacitance(Coss)1.93nF
Pd - Power Dissipation170W
Configuration-
Gate Charge(Qg)103nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.4V
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)0.7mΩ@10V
Number-
Input Capacitance(Ciss)7.37nF

Technical details

170W 40V 1.4V 0.7mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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