TOSHIBA TPHR6503PL,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPHR6503PL,L1Q(M

No reviews yet — be the first to review TOSHIBA TPHR6503PL,L1Q(M.

Specifications

Configuration-
Gate Charge(Qg)110nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)2.72nF
Current - Continuous Drain(Id)393A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation170W
RDS(on)0.89mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)220pF
Number1 N-channel
Input Capacitance(Ciss)10nF

Technical details

N-Channel 30V 393A 170W Surface Mount SOP-8

Related FETs & Power MOSFETs