TOSHIBA TPHR6503PL,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPHR6503PL,L1Q

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Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)110nC@10V
Current - Continuous Drain(Id)150A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation960mW;170W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)0.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10nF
TypeN-Channel

Technical details

N-Channel 30V 150A 960mW 170W Surface Mount SOP-8

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