TOSHIBA · FETs & Power MOSFETs · MPN TPH8R80ANH,L1Q(M
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 12.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 7.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
| Type | N-Channel |
N-Channel 100V 59A 12.8W Surface Mount SOP-8