TOSHIBA · FETs & Power MOSFETs · MPN TPH8R80ANH,L1Q
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 32A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.6W;61W |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
100V 32A 4V 8.8mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS