TOSHIBA TPH8R008NH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH8R008NH,L1Q

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)34A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W;61W
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

80V 34A 4V 8mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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