TOSHIBA · FETs & Power MOSFETs · MPN TPH8R008NH
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 61W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
80V 61W 8mΩ@10V 1 N-channel DFN-8-EP(6.1x5.2) Single FETs, MOSFETs RoHS