TOSHIBA · FETs & Power MOSFETs · MPN TPH6R30ANL,L1Q
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 66A;45A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.3nF |
| Type | N-Channel |
100V 2.5V 6.3mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS