TOSHIBA TPH5R906NH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH5R906NH,L1Q

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)28A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W;57W
RDS(on)5.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

60V 28A 4V 5.9mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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