TOSHIBA TPH5900CNH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH5900CNH,L1Q

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)7nC@10V
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W;42W
RDS(on)59mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

150V 9A 4V 59mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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