TOSHIBA TPH5200FNH,L1Q

TOSHIBA · FETs & Power MOSFETs · MPN TPH5200FNH,L1Q

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)22nC@10V
Current - Continuous Drain(Id)26A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
RDS(on)52mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF

Technical details

250V 26A 4V 78W 52mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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