TOSHIBA TPH4R606NH,L1Q(M

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R606NH,L1Q(M

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)85A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)11mΩ@6.5V
Number1 N-channel
Input Capacitance(Ciss)3.965nF
TypeN-Channel

Technical details

N-Channel 60V 85A 63W Surface Mount SOP-8-EP-5.0mm

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