TOSHIBA TPH4R50ANH1,LQ(MW

TOSHIBA · FETs & Power MOSFETs · MPN TPH4R50ANH1,LQ(MW

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

N-Channel 100V 60A 78W Surface Mount SOP-8-EP-5.0mm

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